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NCE10G120

NCE Power Semiconductor

Trench NPT IGBT

http://www.ncepower.com NCE10G120 1200V, 10A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High spee...


NCE Power Semiconductor

NCE10G120

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http://www.ncepower.com NCE10G120 1200V, 10A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=10A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft switching applications General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Absolute Maximum Ratings Pb Free Product NCE10G120 GCE C G E Symbol Description VCES VGES IC ICM(1) PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current @TC=25°C @TC=100°C Maximum Power Dissipation @TC=25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from TL case for 5seconds Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature Ratings 1200 +/-25 16 10 24 138 -55 to +150 -55 to +150 260 Units V V A A A W °C °C °C 8 , 1 Pb Free Product http://www.ncepower.com NCE10G120 Thermal Characteristics Symbol RƟJC RƟJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Electrical Characteristics of the IGBT TC=25°C Symbol Parameter Off Characteristics Collector to Emitter BVCES ICES IGES Breakdown V...




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