NCE20NF60

NCE20NF60,NCE20NF60F NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 650 210 20 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） ● Strongly recommended for bridge topologies Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20NF60 TO-220 NCE20NF60 NCE20NF60F TO-220F NCE20NF60F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) ID (DC) IDM (pluse) Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °C dv/dt Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAS IAR EAR TO-220 TO-220F NCE20NF60 ...