NCE20NF50

NCE20NF50,NCE20NF50F NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested TVDS@ jmax RDS(ON) ID 560 210 20 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） ● Strongly recommended for bridge topologies Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20NF50 TO-220 NCE20NF50 NCE20NF50F TO-220F NCE20NF50F TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) ID (DC) IDM (pluse) Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj = 125 °C dv/dt Maximum Power Dissipation(Tc=25℃) Derate above 25°C PD Single pulse avalanche energy (Note 2) Avalanche current(Note 1) EAS IAR NCE20NF50 NCE20NF50F 500 ±30 20 20* 12.5 12.5* 60 60* 50 208 34.5 1.67 0.28 690 20 Unit V...