N-Channel Super Junction Power MOSFET
NCE11NF50T
NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode)
General Description
The series of devices ...
Description
NCE11NF50T
NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode)
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON)
ID
560 410 11
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
● Strongly recommended for bridge topologies
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11NF50T
TO-247
NCE11NF50T
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 11 A, Tj = 125 °C
Maximum Power Dissipation(Tc=25℃) Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR
TO-247
NCE11NF50T 500 ±30 11 7 33
50
125 1
340 11
Unit
V V A A A
V/ns
W W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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