NCE20N65T

NCE20N65T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. VDS RDS(ON) ID 650 190 20 V mΩ A Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20N65T TO-247 NCE20N65T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-247 NCE20N65T 650 ±30 20 12.5 60 50 208 1.67 690 20 Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com Unit V V A A A V/ns W W/°C mJ A v1.2 NCE20N65T Parameter Repetitive Avalanche energy ，tAR limited by Tjmax (Note...