N-Channel Super Junction Power MOSFET
NCE11N60T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
...
Description
NCE11N60T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON) ID
650 380 11
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11N60T
TO-247
NCE11N60T
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR
TO-247
NCE11N60T 600 ±30 11 7 33
50
125 1
340 11
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Unit
V V A A A
V/ns
W W/°C
mJ
A
v1.2
NCE11N60T
Parameter Repetitive Avalanche energy ,tAR limited ...
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