N-Channel MOSFET
HFC1N80
Jan 2007
HFC1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 0.6 A
FEATURES
Originative Ne...
Description
HFC1N80
Jan 2007
HFC1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 0.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-126
1 23
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 0.6 * 0.37 * 2.4 * ρ30 90 0.6 1.39 4.0
PD
TJ, TSTG TL
Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
13.9 0.11 -55 to +150
300
* Drain current limited by junction temperature
Units V A A A V mJ A mJ
V/ns W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ. ---
Max. 9.0 62.5
Units ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͨ͑͡͡
HFC1N80
Electrical Characteristics TC=25 qC unless otherwise specified
Sym...
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