Document
HFD2N70S_HFU2N70S
Dec 2009
HFD2N70S / HFU2N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 5.0 ȍ ID = 1.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N70S
1
2 3
HFU2N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 1.5 0.9 6.0 ρ30 62 1.5 3.8 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 38 0.3 -55 to +150
300
Units 9 $ $ $ 9 P$ P-
9QV : :
:ഒ ഒ
ഒ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 3.3 50 110
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFD2N70S_HFU2N70S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 0.75 A
2.0 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 ᒺ ID = 250 ᒺ5HIHUHQFHGWRഒ VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125ఁ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
700 -----
--
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 350 V, ID = 1.6 A, RG = 25 ש
1RWH
VDS = 560V, ID = 1.6 A, VGS = 10 V
1RWH
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.5 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 1.6 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4)
------
Typ Max Units
-- 4.0 5.0 7.0
9 വ
-- -- 9 0.4 -- 9ഒ -- 10 ᒺ -- 100 ᒺ -- 100 ᒹ
-- -100 ᒹ
280 360 30 40 5 6.5
ᓂ ᓂ ᓂ
12 24 ᓩ 10 20 ᓩ 45 90 ᓩ 25 50 ᓩ 6.2 8.0 Q& 1.1 -- Q& 2.2 -- Q&
-- 1.5 -- 6.0 -- 1.4 260 -1.09 --
$
9 ᓩ ˩&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=45mH, IAS=1.6A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD1.5A, di/dt200A/ȝs, VDDBVDSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width 300ȝs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFD2N70S_HFU2N70S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
R [:], DS(ON)
Drain-Source On-Resistance
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
V = 10V GS
9
6 V = 20V
GS
3
* Note : T = 25oC J
0 012345
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
500 400 300
C iss
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
C oss
200
* Note ; 1. V = 0 V
GS
2. f = 1 MHz 100
C rss
0 10-1 100 101
V , Drain-Source Voltage [V] DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
V = 140V DS
10
V = 350V DS
V = 560V DS
8
6
4
2 * Note : I = 1.6A
D
0 02468
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
Capacitances [pF]
HFD2N70S_HFU2N70S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
I , Drain Current [A]
D
1.2
1.1
1.0
0.9 * Note : 1. V = 0 V
GS
2. I = 250 PA D
0.8 -100
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area
101
is Limited by R DS(on)
10 Ps
100 Ps
100 10-1
100
1 ms
* Notes : 1. T = 25 oC
C
2. T = 150 oC J
3. Single Pulse
10 ms 100 ms DC
101 102
1.