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HFB1N70S
N-Channel MOSFET
Description
HFB1N70S Dec 2012 HFB1N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.5 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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