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HFC1N70

N-Channel MOSFET

Description

HFC1N70 Dec 2008 HFC1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON)...

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