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HFS12N65S

N-Channel MOSFET

Description

HFS12N65S Aug 2009 HFS12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(O...

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