N-Channel MOSFET
HFS8N65S
Sep 2009
HFS8N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A
FEATURES
Originativ...
Description
HFS8N65S
Sep 2009
HFS8N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 7.2* 4.3* 28.8* ρ30 210 7.2 14.7 4.5
PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
48 0.38 -55 to +150
300
Thermal Resistance Characteristics
Symbol RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ. ---
Max. 2.6 62.5
Units V A A A V mJ A mJ
V/ns W W/ఁ ఁ
ఁ
Units
ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
...
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