N-Channel MOSFET
HFW5N65S_HFI5N65S
Mar 2010
HFW5N65S / HFI5N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A
FE...
Description
HFW5N65S_HFI5N65S
Mar 2010
HFW5N65S / HFI5N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
D2-PAK I2-PAK
HFW5N65S HFI5N65S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 4.2 2.4 16.8 ρ30 180 4.2 10 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
3.13 100 0.8 -55 to +150
300
Units 9 $ $ $ 9 P$ P-
9QV : :
:ഒ ഒ
ഒ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.25 40 62.5
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡
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