N-Channel MOSFET
HFD2N65S_HFU2N65S
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A
FE...
Description
HFD2N65S_HFU2N65S
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N65S
1
2 3
HFU2N65S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 1.6 1.0 6.4 ρ30 100 1.6 4.4 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 44 0.35 -55 to +150
300
Units 9 $ $ $ 9 P$ P-
9QV : :
:ഒ ഒ
ഒ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.87 50 110
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝...
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