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HFU1N65

N-Channel MOSFET

Description

HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.0 nC (Typ.)  Extended Safe Operatin...

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