HFW5N60S

HFW5N60S_HFI5N60S Sep 2009 HFW5N60S / HFI5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operatin...