N-Channel MOSFET
HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATUR...
Description
HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N60
1
2 3
HFU1N60
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 0.9 0.57 3.6 ρ30 50 0.9 3.1 5.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 31 0.25 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 4.0 50 110...
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