N-Channel MOSFET
HFB1N60
Nov 2007
HFB1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A
FEATURES
Originative N...
Description
HFB1N60
Nov 2007
HFB1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 0.4 0.25 1.6 ρ30 50 0.4 0.3 5.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
1.0 3.0 0.02 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ ఁ
ఁ
Thermal Resistance Characteristics
Symbol RșJL
RșJA
Junction-to-Lead
Parameter
Junction-to-Ambient
Typ. ---
Max. 40 120
Units ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFB1N60
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
...
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