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HFH18N50S Dataheets PDF



Part Number HFH18N50S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFH18N50S DatasheetHFH18N50S Datasheet (PDF)

HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 52 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwis.

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HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 52 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 19 11.4 76 ρ30 945 19 23 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 239 1.92 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- 0.24 -- Max. 0.52 -40 Units ୅/W క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡ HFH18N50S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 9.5 A 2.0 -- 4.0 -- 0.220 0.265 V Ÿ Off Characteristics BVDSS ǻBVDSS /ǻTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ᒺ ID = 250 ᒺ, Referenced to 25୅ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125୅ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ----- -- -- -- V 0.5 -- V/୅ -- 1 ᒺ -- 10 ᒺ -- 100 ᒹ -- -100 ᒹ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2850 3700 ᓂ -- 310 400 ᓂ -- 21 27 ᓂ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 250 V, ID = 19 A, RG = 25 Ÿ (Note 4,5) VDS = 400V, ID = 19 A, VGS = 10 V (Note 4,5) -- 55 120 ᓩ -- 165 340 ᓩ -- 95 200 ᓩ -- 90 190 ᓩ -- 52 68 nC -- 12 -- nC -- 16 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 19 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 19 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4) ------ -- 19 -- 76 -- 1.4 500 -5.4 -- A V ᓩ ȝC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=4.7mH, IAS=19A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD”19A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2% 5. Essentially Independent of Operating Temperature క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡ HFH18N50S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] DS(ON)R [:], Drain-Source On-Resistance VDS, Drain-Source Voltage[V] Figure 1. On Region Characteristics 0.7 0.6 V = 10V GS 0.5 0.4 V = 20V GS 0.3 0.2 0.1 0 Note : T = 25oC J 10 20 30 40 50 60 70 I , Drain Current [A] D Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 5000 4000 3000 2000 1000 C iss C oss C rss C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd * Note ; 1. V = 0 V GS 2. f = 1 MHz 0 10-1 100 101 V , Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] IDR, Reverse Drain Current [A] VGS, Gate-Source Voltage[V] Figure 2. Transfer Characteristics VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 10 V = 100V DS V = 250V DS 8 V = 400V DS 6 4 2 Note : I = 19A D 0 0 10 20 30 40 50 60 Q , Total Gate Charge [nC] G Figure 6. Gate Charge Characteristics క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡ Capacitances [pF] HFH18N50S Typical Characteristics (continued) BVDSS, (Normalized) Drain-Source Breakdown Voltage ID, Drain Current [A] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area 102 is Limited by R DS(on) 10 Ps 100 Ps 1 ms 101 10 ms 100 ms DC 100 10-1 10-2 100 * Notes : 1. T = 25 oC C 2. T = 150 oC J 3. Single Pulse 101 102 V , Drain-Source Voltage [V] DS 103 Figure 9. Maximum Safe Operating Area RDS(ON), (Normalized) Drain-Source On-Resistance I , Drain Current [A] D 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 Note : 1. V = 10 V GS 2. I .


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