Document
HFH18N50S
Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 19 11.4 76 ρ30 945 19 23 4.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
239 1.92 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/
Thermal Resistance Characteristics
Symbol RșJC RșCS
RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. --
0.24 --
Max. 0.52
-40
Units /W
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HFH18N50S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 9.5 A
2.0 -- 4.0 -- 0.220 0.265
V
Off Characteristics
BVDSS ǻBVDSS
/ǻTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 ᒺ ID = 250 ᒺ, Referenced to 25 VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125 VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500 -----
--
-- -- V 0.5 -- V/ -- 1 ᒺ -- 10 ᒺ -- 100 ᒹ
-- -100 ᒹ
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2850 3700 ᓂ -- 310 400 ᓂ -- 21 27 ᓂ
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 250 V, ID = 19 A, RG = 25
(Note 4,5)
VDS = 400V, ID = 19 A, VGS = 10 V
(Note 4,5)
-- 55 120 ᓩ -- 165 340 ᓩ -- 95 200 ᓩ -- 90 190 ᓩ -- 52 68 nC -- 12 -- nC -- 16 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 19 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 19 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4)
------
-- 19 -- 76 -- 1.4 500 -5.4 --
A
V ᓩ ȝC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=4.7mH, IAS=19A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD19A, di/dt200A/ȝs, VDDBVDSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width 300ȝs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
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HFH18N50S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
DS(ON)R [:], Drain-Source On-Resistance
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
0.7
0.6
V = 10V GS
0.5
0.4
V = 20V GS
0.3
0.2
0.1 0
Note : T = 25oC J
10 20 30 40 50 60 70
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
5000 4000 3000 2000 1000
C iss
C oss
C rss
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
* Note ; 1. V = 0 V
GS
2. f = 1 MHz
0 10-1 100 101
V , Drain-Source Voltage [V] DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
VGS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12 10 V = 100V
DS
V = 250V DS
8 V = 400V DS
6 4 2
Note : I = 19A D
0 0 10 20 30 40 50 60
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
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Capacitances [pF]
HFH18N50S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area
102
is Limited by R DS(on)
10 Ps
100 Ps 1 ms 101 10 ms 100 ms DC
100
10-1 10-2
100
* Notes : 1. T = 25 oC
C
2. T = 150 oC J
3. Single Pulse
101 102
V , Drain-Source Voltage [V] DS
103
Figure 9. Maximum Safe Operating Area
RDS(ON), (Normalized) Drain-Source On-Resistance
I , Drain Current [A]
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0 -100
Note : 1. V = 10 V
GS
2. I .