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HFP5N50S
N-Channel MOSFET
Description
HFP5N50S OCT 2008 HFP5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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