N-Channel MOSFET
HFW5N50S_HFI5N50S
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A
F...
Description
HFW5N50S_HFI5N50S
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D2-PAK I2-PAK
HFW5N50S HFI5N50S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 5.0 2.9 20 ±30 300 5.0 7.3 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
3.13 73 0.58 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.71 40 62.5
Units ℃/W
◎ SEMIHOW REV.A0 June 2009...
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