N-Channel MOSFET
HFS830
Dec 2005
HFS830
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 4.5 A
FEATURES
Originative New...
Description
HFS830
Dec 2005
HFS830
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃) - Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
500 4.5* 2.9* 18* ±30 270 4.5 7.3 5.5 38 0.3 -55 to +150
300
Thermal Resistance Characteristics
Symbol RθJC RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ. ---
Max. 3.31 62.5
Units V A A A V mJ A mJ
V/ns W W/℃ ℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Dec 2005
HFS830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Char...
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