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HFU4N50
N-Channel MOSFET
Description
HFD4N50_HFU4N50 July 2005 HFD4N50 / HFU4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Are...
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HFU4N50
N-Channel MOSFET
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