Document
HFD4N50_HFU4N50
July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD4N50
1 2 3
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 2.6 1.64 10.4 ρͤ͑͡ 440 2.6 4.5 4.5
PD
TJ, TSTG TL
Total Power Dissipation (TA=25ఁ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 45 0.36 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.78 50 110
Units ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD4N50_HFU4N50
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 1.3 A͑
2.5 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ VDS = 500 V, VGS = 0 V͑ VDS = 400 V, TC = 125ఁ͑ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500 -----
--
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz͑
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 250 V, ID = 3.4 A, RG = 25 ͑ש ͑ ͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 400 V, ID = 3.4 A, VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2.6 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 3.4 A, VGS = 0 V diFGW $ȝV(Note 4)
------
Typ Max Units
-- 4.5 2.0 2.7
V ͑ש
-- -- V 0.38 -- ·͠ఁ͑
-- 1 Ꮃ͑ -- 10 Ꮃ͑ -- 100 Ꮂ͑
-- -100 Ꮂ͑
450 590 70 90 10 17
Ꮔ͑ Ꮔ͑ Ꮔ͑
15 30 Ꭸ͑ 70 140 Ꭸ͑ 30 60 Ꭸ͑ 40 80 Ꭸ͑ 13 17 Οʹ͑ 4.0 -- Οʹ͑ 6.0 -- Οʹ͑
-- 2.6 -- 10.4 -- 1.4 220 -1.3 --
A
V Ꭸ͑ ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=68mH, IAS=3.4A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD4N50_HFU4N50
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
RDS(ON)[@ Drain-Source On-Resistance
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
900 800 700 600 500 400 300 200 100
0 10-1
Ciss Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
1. VGS = 0 V 2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12 VDS = 100V
10 VDS = 250V VDS = 400V
8
6
4
2 D = 3.4A
0 0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
Capacitances [pF]
HFD4N50_HFU4N50
Typical Characteristics (continued)
RDS(ON), (Normalized) Drain-Source On-Resistance
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area
is Limited by R 101 DS(on)
10 Ps
100 Ps
1 ms
10 ms 100 100 ms
DC
10-1 100
* Notes : 1. TC = 25 oC 2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V.