HFP4N60

HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 4.0 2.5 16 ρ30 240 4.0 10 5.5 PD TJ, TSTG TL Power Dissipation (TC = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 100 0.8 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/ଇ ଇ ଇ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.25 -62.5 Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡ HFP4N60 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Ga...