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HFS50N06
60V N-Channel MOSFET
Description
HFS50N06 July 2005 HFS50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.0...
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