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HFS630
200V N-Channel MOSFET
Description
HFS630 July 2005 HFS630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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