HFW11N40

HFW11N40 Dec 2005 HFW11N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ ȍ ID = 11.4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 11.4 7.2 45.6 ρ30 520 11.4 14.7 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25ଇ) * Power Dissipation (TC = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 3.13 147 1.18 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/ଇ ଇ ଇ Thermal Resistance Characteristics Symbol RșJC RșJA RșJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 0.85 40 62.5 Units ഒ: క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFW11N40 Electrical Characteristics...