400V N-Channel MOSFET
HFD6N40S / HFU6N40S
July 2009
HFD6N40S / HFU6N40S
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ = 0.83 Ω ID = 4.5 A...
Description
HFD6N40S / HFU6N40S
July 2009
HFD6N40S / HFU6N40S
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ = 0.83 Ω ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD6N40S
1
2 3
HFU6N40S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400 4.5 2.7 18 ±30 280 4.5 4.8 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25℃) Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 48 0.38 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.6 50 110
Units ℃/W
◎ SEMIHOW REV.A0...
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