NCE15H15T

http://www.ncepower.com Pb Free Product NCE15H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ） ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE15H15T NCE15H15T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt Limit 150 ±20 150 106 600 460 3.07 3100 18.5 Unit V V A A A W W/℃ mJ V/ns Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepowe...