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NCE1550 Dataheets PDF



Part Number NCE1550
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE1550 DatasheetNCE1550 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE1550 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent.

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http://www.ncepower.com Pb Free Product NCE1550 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE1550 NCE1550 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 150 ±20 50 35 210 220 1.47 640 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE1550 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.68 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 150 170 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3.2 4.5 V Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS VGS=10V, ID=40A VDS=25V,ID=30A - 19.5 85 - 23 - mΩ S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss VDS=25V,VGS=0V, F=1.0MHz - 3250 - 670 - PF PF Crss - 150 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 26 - nS Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time tr td(off) tf VDD=30V,ID=2A,RL=15Ω - 24 VGS=10V,RG=2.5Ω - 91 - 39 - nS nS nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS=30V,ID=30A, VGS=10V - 163 - 31 - 64 nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=40A - 1.2 V Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge IS - - 50 A trr TJ = 25°C, IF = 40A - 42 nS Qrr di/dt = 100A/μs(Note3) - 66 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Test circuit 1)EAS test Circuits Pb Free Product NCE1550 2)Gate charge test Circuit: 3)Switch Time Test Circuit: Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 ID- Drain Current (A) http://www.ncepower.com Pb Free Product NCE1550 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Normalized On-Resistance Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 C Capacitance (pF) http://www.ncepower.com Pb Free Product NCE1550 Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 http://www.ncepower.com Pb Free Product NCE1550 TO-220-3L Package Information Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V I Φ Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.330 0.650 1.20.


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