Document
http://www.ncepower.com
Pb Free Product
NCE1550
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE1550
NCE1550
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
150 ±20 50 35 210 220 1.47 640 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE1550
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
150 170
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5 3.2
4.5
V
Drain-Source On-State Resistance Forward Transconductance
RDS(ON) gFS
VGS=10V, ID=40A VDS=25V,ID=30A
- 19.5 85 -
23 -
mΩ S
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss
VDS=25V,VGS=0V, F=1.0MHz
- 3250 - 670
-
PF PF
Crss
- 150
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 26
-
nS
Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
tr td(off)
tf
VDD=30V,ID=2A,RL=15Ω - 24
VGS=10V,RG=2.5Ω
- 91
- 39
-
nS nS nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs Qgd
VDS=30V,ID=30A, VGS=10V
- 163 - 31 - 64
nC nC nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
-
1.2 V
Diode Forward Current (Note 2)
Reverse Recovery Time Reverse Recovery Charge
IS
- - 50
A
trr
TJ = 25°C, IF = 40A
- 42
nS
Qrr
di/dt = 100A/μs(Note3)
- 66
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
http://www.ncepower.com
Test circuit
1)EAS test Circuits
Pb Free Product
NCE1550
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
ID- Drain Current (A)
http://www.ncepower.com
Pb Free Product
NCE1550
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
C Capacitance (pF)
http://www.ncepower.com
Pb Free Product
NCE1550
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
ID- Drain Current (A)
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
http://www.ncepower.com
Pb Free Product
NCE1550
TO-220-3L Package Information
Symbol
A A1 b b1 c c1 D E E1 e e1 F H h L L1 V I Φ
Dimensions In Millimeters
Min Max
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.330
0.650
1.20.