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NCE0110K Dataheets PDF



Part Number NCE0110K
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE0110K DatasheetNCE0110K Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent pa.

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http://www.ncepower.com Pb Free Product NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE0110K NCE0110K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 100 ±20 9.6 6.5 58 30 0.2 150 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepower.com Pb Free Product NCE0110K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 5 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=100V,VGS=0V VGS=±20V,VDS=0V 100 110 --- 1 ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=6A VDS=25V,ID=6A 1.2 1.8 - 108 3.5 - 2.5 140 - V mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Clss Coss VDS=25V,VGS=0V, F=1.0MHz - 690 - 120 - PF PF Crss - 90 - PF Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω VDS=30V,ID=3A, VGS=10V - 11 - 7.4 - 35 - 9.1 - 15.5 - 3.2 - 4.7 - - nS nS nS nS nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=9.6A - - 1.2 V IS - - 9.6 A trr TJ = 25°C, IF =9.6A - 21 Qrr di/dt = 100A/μs(Note3) - 97 nS nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.1 http://www.ncepower.com Test Circuit 1) EAS test Circuit Pb Free Product NCE0110K 2) Gate charge test Circuit 3) Switch Time Test Circuit Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.1 ID- Drain Current (A) http://www.ncepower.com Typical Electrical and Thermal Characteristics (Curves) Pb Free Product NCE0110K Normalized On-Resistance Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.1 C Capacitance (pF) http://www.ncepower.com Pb Free Product NCE0110K Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.1 http://www.ncepower.com TO-252 Package Information Pb Free Product NCE0110K Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. 2.200 Max. 2.400 0.000 0.127 0.660 0.860 0.460 0.580 6.500 6.700 5.100 5.460 .


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