Document
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Pb Free Product
NCE0110K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0110K
NCE0110K
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 9.6 6.5 58 30 0.2 150 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE0110K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
5 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3)
BVDSS IDSS IGSS
VGS=0V ID=250μA VDS=100V,VGS=0V VGS=±20V,VDS=0V
100 110 ---
1 ±100
V μA nA
Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4)
VGS(th) RDS(ON)
gFS
VDS=VGS,ID=250μA VGS=10V, ID=6A VDS=25V,ID=6A
1.2 1.8 - 108
3.5 -
2.5 140
-
V mΩ S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4)
Clss Coss
VDS=25V,VGS=0V, F=1.0MHz
- 690 - 120
-
PF PF
Crss
- 90
-
PF
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω
VDS=30V,ID=3A, VGS=10V
- 11 - 7.4 - 35 - 9.1 - 15.5 - 3.2 - 4.7
-
-
nS nS nS nS nC nC nC
Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=9.6A
- - 1.2
V
IS
- - 9.6
A
trr
TJ = 25°C, IF =9.6A
- 21
Qrr
di/dt = 100A/μs(Note3)
- 97
nS nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1) EAS test Circuit
Pb Free Product
NCE0110K
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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ID- Drain Current (A)
http://www.ncepower.com Typical Electrical and Thermal Characteristics (Curves)
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NCE0110K
Normalized On-Resistance
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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C Capacitance (pF)
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Pb Free Product
NCE0110K
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
ID- Drain Current (A)
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com TO-252 Package Information
Pb Free Product
NCE0110K
Symbol
A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V
Dimensions In Millimeters
Min. 2.200
Max. 2.400
0.000
0.127
0.660
0.860
0.460
0.580
6.500
6.700
5.100
5.460
.