Document
AiT Semiconductor Inc.
www.ait-ic.com
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The AM8820 is available in TSSOP8 Packages
ORDERING INFORMATION
FEATURES
20V/6A, RDS(ON)= 20mΩ(typ.) @ VGS= 10V RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 27mΩ(typ.) @ VGS= 3.1V RDS(ON)= 30mΩ(typ.) @ VGS= 2.5V RDS(ON)= 42mΩ(typ.) @ VGS= 1.8V
Super High Dense Cell Design Reliable and Rugged ESD Protected Lead Free and Green Devices Available
(RoHS Compliant) Available in TSSOP8 Packages.
APPLICATION
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
DUAL N-CHANNEL MOSFET
Package Type
Part Number
TSSOP8
AM8820TMX8R TMX8
AM8820TMX8VR
Note
R: Tape & Reel V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Pin #
1 2 3 4 5 6 7 8
Top View
Symbol D S1 S1 G1 G2 S2 S2 D
Function
Drain Source1 Source1
Gate1 Gate2 Source2 Source2 Drain
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-2-
AiT Semiconductor Inc.
www.ait-ic.com
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃ Unless otherwise specified
VDSS, Drain-Source Voltage
20V
VGSS, Gate-Source Voltage
±12V
ID, Continuous Drain Current
VGS=10V
6A
IDM, 300μs Pulsed Drain Current
VGS=10V
20A
IS, Diode Continuous Forward Current
1.5A
TJ, Maximum Junction Temperature
150℃
TSTG, Storage Temperature Range
-55 °Cto150℃
PD, Maximum Power Dissipation
TA=25℃ TA=100℃
1.25W 0.5W
RθJANote1, Thermal Resistance-Junction to Ambient
100℃/W
Stresses above may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1:Surface Mounted on 1in2 pad area, t ≤ 10sec.
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-3-
AiT Semiconductor Inc.
www.ait-ic.com
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃ Unless otherwise noted
Parameter
Symbol
Conditions
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,IDS=250μA
Zero Gate Voltage Drain Current
V DS =16V,V GS =0V I DSS
VDS=16V, VGS=0V, TJ=85℃
Gate Threshold Voltage
V GS(th)
VDS=VGS, IDS=250μA
Gate Leakage Current
IGSS VGS=±10V, VDS=0V
VGS=10V, IDS=6A
Drain-Source On-state Resistance
R DS(ON) Note2
VGS=4.5V, IDS=5A VGS=3.1V, IDS=4A VGS=2.5V, IDS=4A
VGS=1.8V, IDS=2A
Diode Characteristics
Diode Forward Voltage
VSDNote2 ISD=1.5A,VGS=0V
Reverse Recovery Time Reverse Recovery Charge
t rr ISD=6A, dISD/dt=100A/μs
Q rr
Dynamic CharacteristicsNote3
Gate Resistance
RG VGS=0V,VDS=0V, F=1MHz
Input Capacitance
Ciss VGS=0V,
Output Capacitance
C oss
VDS=10V,
Reverse Transfer Capacitance Crss Frequency=1.0MHz
Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
t d(on) tr
t d(off) tf
VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω
Gate Charge Characteristics Note3
Total Gate Charge
Qg VDS=10V
Gate-Source Charge
Qgs VGS=4.5V
Gate-Drain Charge
Qgd IDS=6A
NOTE2: Pulse test: pulse width ≦ 300μs, duty cycle ≦2% NOTE3: Guaranteed by design, not subject to production testing.
Min Typ. Max Unit
20 - - V
--1 µA
- - 30
0.4 0.7 1
V
- - ±10 μA
16 20 27
19 23 30
22 27 35 mΩ
25 30 39
32 42 55
- 0.7 1.3 V - 15 - nS - 7 - nC
-4 -Ω
- 550 -
- 100 -
pF
- 85 -
- 5 10
- 15 26 ns
- 30 55
- 5 10
- 8.8 12 - 0.8 - nC - 3.3 -
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-4-
AiT Semiconductor Inc.
www.ait-ic.com
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-5-
AiT Semiconductor Inc.
www.ait-ic.com
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-6-
AiT Semiconductor Inc.
www.ait-ic.com
PACKAGE INFORMATION
Dimension in TSSOP8 Package (Unit: mm)
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Symbol D E b c E1 A A2 A1 e L H θ
Min Max
2.900
3.100
4.300
4.500
0.190
0.300
0.090
0.200
6.250
6.550
- 1.100
0.800
1.000
0.020
0.150
0.65 (BSC)
0.500
0.700
0.25(TYP)
1° 7°
REV1.1
- JUN 2010 RELEASED, NOV 2011 REVISED -
-7-
AiT Semiconductor Inc.
www.ait-ic.com
IMPORTANT NOTICE
AM8820
TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHA.