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AM8820 Dataheets PDF



Part Number AM8820
Manufacturers AiT Semiconductor
Logo AiT Semiconductor
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet AM8820 DatasheetAM8820 Datasheet (PDF)

AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM8820 is available in TSSOP8 Packages ORDERING INFORMATION FEATURES  20V/6A, RDS(ON)= 20mΩ(typ.) @ VGS= 10V RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 27mΩ(typ.) @ VGS= 3.1V RDS(ON)= 30mΩ(typ.) @ VGS= 2.5V RDS(ON)= 42mΩ(typ.) @ VGS= 1.8V  Super High Dense Cell Design  Reliable and Rugged  ESD Protected  Lead Free and Green Devices Available (RoHS Compliant)  Available in.

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AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM8820 is available in TSSOP8 Packages ORDERING INFORMATION FEATURES  20V/6A, RDS(ON)= 20mΩ(typ.) @ VGS= 10V RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 27mΩ(typ.) @ VGS= 3.1V RDS(ON)= 30mΩ(typ.) @ VGS= 2.5V RDS(ON)= 42mΩ(typ.) @ VGS= 1.8V  Super High Dense Cell Design  Reliable and Rugged  ESD Protected  Lead Free and Green Devices Available (RoHS Compliant)  Available in TSSOP8 Packages. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. DUAL N-CHANNEL MOSFET Package Type Part Number TSSOP8 AM8820TMX8R TMX8 AM8820TMX8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Pin # 1 2 3 4 5 6 7 8 Top View Symbol D S1 S1 G1 G2 S2 S2 D Function Drain Source1 Source1 Gate1 Gate2 Source2 Source2 Drain REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -2- AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specified VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current VGS=10V 6A IDM, 300μs Pulsed Drain Current VGS=10V 20A IS, Diode Continuous Forward Current 1.5A TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55 °Cto150℃ PD, Maximum Power Dissipation TA=25℃ TA=100℃ 1.25W 0.5W RθJANote1, Thermal Resistance-Junction to Ambient 100℃/W Stresses above may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1:Surface Mounted on 1in2 pad area, t ≤ 10sec. REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -3- AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ELECTRICAL CHARACTERISTICS TA = 25℃ Unless otherwise noted Parameter Symbol Conditions Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA Zero Gate Voltage Drain Current V DS =16V,V GS =0V I DSS VDS=16V, VGS=0V, TJ=85℃ Gate Threshold Voltage V GS(th) VDS=VGS, IDS=250μA Gate Leakage Current IGSS VGS=±10V, VDS=0V VGS=10V, IDS=6A Drain-Source On-state Resistance R DS(ON) Note2 VGS=4.5V, IDS=5A VGS=3.1V, IDS=4A VGS=2.5V, IDS=4A VGS=1.8V, IDS=2A Diode Characteristics Diode Forward Voltage VSDNote2 ISD=1.5A,VGS=0V Reverse Recovery Time Reverse Recovery Charge t rr ISD=6A, dISD/dt=100A/μs Q rr Dynamic CharacteristicsNote3 Gate Resistance RG VGS=0V,VDS=0V, F=1MHz Input Capacitance Ciss VGS=0V, Output Capacitance C oss VDS=10V, Reverse Transfer Capacitance Crss Frequency=1.0MHz Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time t d(on) tr t d(off) tf VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Gate Charge Characteristics Note3 Total Gate Charge Qg VDS=10V Gate-Source Charge Qgs VGS=4.5V Gate-Drain Charge Qgd IDS=6A NOTE2: Pulse test: pulse width ≦ 300μs, duty cycle ≦2% NOTE3: Guaranteed by design, not subject to production testing. Min Typ. Max Unit 20 - - V --1 µA - - 30 0.4 0.7 1 V - - ±10 μA 16 20 27 19 23 30 22 27 35 mΩ 25 30 39 32 42 55 - 0.7 1.3 V - 15 - nS - 7 - nC -4 -Ω - 550 - - 100 - pF - 85 - - 5 10 - 15 26 ns - 30 55 - 5 10 - 8.8 12 - 0.8 - nC - 3.3 - REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -4- AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -5- AiT Semiconductor Inc. www.ait-ic.com AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -6- AiT Semiconductor Inc. www.ait-ic.com PACKAGE INFORMATION Dimension in TSSOP8 Package (Unit: mm) AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Symbol D E b c E1 A A2 A1 e L H θ Min Max 2.900 3.100 4.300 4.500 0.190 0.300 0.090 0.200 6.250 6.550 - 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1° 7° REV1.1 - JUN 2010 RELEASED, NOV 2011 REVISED - -7- AiT Semiconductor Inc. www.ait-ic.com IMPORTANT NOTICE AM8820 TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHA.


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