AM3400A

AiT Semiconductor Inc. www.ait-ic.com   AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM3400A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  30V/5.8A, RDS(ON) =22mΩ(typ.)@VGS =10V  30V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V  30V/3.5A, RDS(ON) =31mΩ(typ.)@VGS =2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 package The AM3400A is available in SOT-23 package. ORDERING INFORMAITON Package Type Part Number SOT-23 AM3400AE3R E3 AM3400AE3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ means Green Package APPLICATIONS  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter N CHANNEL MOSFET REV1.0   -JUL 2010 RELEASED - -1- AiT Semiconductor Inc. www.ait-ic.com     PIN DESCRIPTION AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Top View Symbol G Gate S Source D Drain   Function REV1.0   -JUL 2010 RELEASED - -2- AiT Semiconductor Inc. www.ait-ic.com     ABSOLUTE MAXIMUM RAT...