AM2317

AiT Semiconductor Inc. www.ait-ic.com AM2317 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement  mode power field effect transistor is produced using  high cell density advanced trench technology.  This high density process is especially tailored to  minimize on-state resistance. These devices are  particularly suited for low voltage application, and low in-line power loss are needed in a very small outline  surface mount package.  -20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance Available in SOT-23 Package The AM2317 is available in SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 AM2317E3R E3 AM2317E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package APPLICATION  Power Management  Portable Equipment  DC/DC Converter  Load Switch  DSC  LCD Display inverter TYPICAL APPLICATION REV2.0 - NOV 2011 RELEASED, MAY 2013 UPDATED - P-Channel -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM2317 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET Pin # 1 2 3 Symbol G S D Top View Function Gate Source Drain REV2.0 - NOV 2011 RELEASED, MAY 2013 UPDATED - -2- AiT Semiconductor Inc. www.ait-ic.c...