IXTF1N400

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 260 °C 20..120 / 4.5..27 N/lb. 4000 V~ 5g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 3.2kV, VGS = 0V VDS = 4.0kV VDS = 3.2kV Note 2, TJ = 100°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 2.0 4.0 V ±100 nA 50 μA 250 μA 250 μA 60 Ω VDSS ID25 RDS(on) = 4000V = 1A ≤ 60Ω ISOPLUS i4-PakTM 12 5 Isolated Tab 1 = Gate 2 = Source 5 = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits z Laser and X-Ray Generation Systems © 2012 IXYS CORPORATION, All Rights Reserved DS100159D(01/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specifie...