A3356

AiT Semiconductor Inc. www.ait-ic.com A3356 100mA, 5.0GHz, 12V, NPN SILICON EPITAXIAL MICROWAVE LOW NOISE RF TRANSISTOR DESCRIPTION FEATURES The A3356 is an NPN silicon Epitaxial Transistor. It has low noise and high power gain The A3356 is available in SOT-23 package. Low noise Collector Current:100mA (Max) High Frequency: 5.0GHz (Typ) Collector-Emitter Voltage: 12V Available in SOT-23 Package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 E3 A3356E3R-XXX A3356E3VR-XXX XXX: Ranking R24 or R25 Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package PIN DESCRIPTION VHF UHF CATV hFE CLASSIFICATION Rank hFE Value R24/Q 50-160 R25/Q 125-250 Pin # 1 2 3 Top View Function Base Emitter Collector REV1.2 - AUG 2007 RELEASED – DEC 2008 REVISED - -1- AiT Semiconductor Inc. www.ait-ic.com ABSOLUTE MAXIMUM RATING (T=25℃) Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature A3356 100mA, 5.0GHz, 12V, NPN SILICON EPITAXIAL MICROWAVE LOW NOISE RF TRANSISTOR Limit 20 12 3 100 0.2 150 -65 ~ +150 Unit V V V mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (T=25℃) Symbol Parameter Condition Min Typ Max BVCBO Collector-Base Breakdown Voltage IC=10uA 20 BVCEO Collector-Emitter Breakdown Voltage IC=1mA 12 BVEBO Emitter-Base Breakdown Voltage IE=10uA 3 I...