A3355

AiT Semiconductor Inc. www.ait-ic.com A3355 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR DESCRIPTION FEATURES The A3355 is an NPN silicon Epitaxial Transistor. It  has High frequency.   The A3355 is available in SOT-23 and TO-92  packages   Collector Current: 200mA (Max) High Frequency: 4.5GHz (Typ) Collector-Emitter Voltage: 12V Low noise and high gain bandwidth product High power gain Available in SOT-23 and TO-92 Packages ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 E3 A3355E3R A3355E3VR TO-92 A3355ZY Z A3355ZVY R: Tape & Reel Note V: Halogen free Package Y: A : Ammo Package B : Bulk Package AiT provides all RoHS products Suffix “ V “ means Halogen free Package  VHF  UHF  CATV PIN DESCRIPTION REV1.4 Pin # 1 2 3 Top View Base Emitter Collector - AUG 2007 RELEASED, OCT 2013 UPDATED - Top View Function -1- AiT Semiconductor Inc. www.ait-ic.com ABSOLUTE MAXIMUM RATING T=25℃ VCBO, Collector-Base Voltage VCEO, Collector-Emitter Voltage VEBO, Emitter-Base Voltage IC, Collector Current PC, Collector Power Dissipation TJ, Junction Temperature TSTG, Storage Temperature SOT-23 TO-92 A3355 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR 20V 12V 3V 200mA 0.6W 0.2W 150℃ -65℃~ +150℃ ELECTRICAL CHARACTERISTICS T=25℃ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Cu...