P-Channel Trench MOSFET
MDD3754 – P-Channel Trench MOSFET
MDD3754
P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ
General Description
The MDD3754 ...
Description
MDD3754 – P-Channel Trench MOSFET
MDD3754
P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ
General Description
The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
Features
VDS = -40V
ID = -24.4A
@VGS = -10V
RDS(ON)
< 43mΩ @ VGS = -10V
< 58mΩ @ VGS = -4.5V
Applications
Inverters General purpose applications
D
G
Absolute Maximum Ratings (TC =25o)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Characteristics (Note 2)
Pulsed Drain Current Power Dissipation
Single Pulse Avalanche Energy Junction and Storage Temperature Range
TC=25oC TC=100oC
TC=25oC TC=100oC (Note 3)
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1)
Symbol RθJA RθJC
S
Rating -40 ±20 -24.4 -15.4 -50 41.7 16.7 40.5
-55~+150
Unit V V A A A
W
mJ oC
Rating 40 3.0
Unit oC/W
October 2008. Version 1.0
1 MagnaChip Semiconductor Ltd.
MDD3754 – P-Channel Trench MOSFET
Ordering Information
Part Number MDD3754RH
Temp. Range -55~150oC
Package TO-252
Packing Tape & Reel
RoHS Status Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate ...
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