TPT5609

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Excellent linearity of Current Gain x Low saturation voltage Halogen free available upon request by adding suffix "-HF" TPT5609 NPN Epitaxial Silicon Transistor Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 20 25 5.0 1.0 0.75 -55 to +150 -55 to +150 Unit V V V A W OC OC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS BVCBO Collector-Base Breakdown Voltage (IC=10ӴAdc, IE=0) BVCEO Collector-Emitter Breakdown Voltage (IC=1mAdc, IB=0) BVEBO ICBO Emitter-Base Breakdown Voltage (IE=10uAdc, IC=0) Collector Cutoff Current (VCB=20Vdc,IE=0) IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS 25 --- --- Vdc 20 --- --- Vdc 5.0 --- --- Vdc --- --- 1 uAdc --- --- 1 uAdc hFE VBE(on) VCE(sat) fT Cob DC Current gain (IC=500mAdc, VCE=2.0Vdc) Base-Emitter On Voltage (VCE=2.0Vdc, IC=500mAdc) Collector-Emitter Saturation Voltage (IC=800mAdc, IB=80mAdc) Current Gain Bandwidth Product (VCE=2.0Vdc, IC=500mAdc) Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) 60 --- 240 --- --- --- 1.0 Vdc --- --- 0.5 Vdc --- 190 --- MHz --- 22 --- pF CLASSIFICATION O...