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BTS50055-1TMC Dataheets PDF



Part Number BTS50055-1TMC
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Smart Highside High Current Power Switch
Datasheet BTS50055-1TMC DatasheetBTS50055-1TMC Datasheet (PDF)

Data Sheet BTS50055-1TMC Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense •.

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Data Sheet BTS50055-1TMC Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection • Green product (RoHS compliant) • AEC qualified Product Summary Operating voltage On-state resistance Noinal current Load current (ISO) Short circuit current limitation Current sense ratio Vbb(on) RON IL(nom) IL(ISO) IL(SC) IL : IIS PG-TO220-7-4 7 Application • Power switch with current sense diagnostic 1 SM D feedback for 12 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits 5.0 ... 34 V 6.0 mΩ 17 A 70 A 130 A 14 000 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. Voltage source Voltage sensor 3 IN ESD Logic Overvoltage protection Current limit Gate protection R bb Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense 4 & Tab + Vbb OUT 1,2,6,7 IL Load I IN Temperature sensor VIN VIS Logic GND I IS IS 5 RIS PROFET Load GND 1) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 8). Infineon Technologies AG Page 1of 17 2010-April-27 Pin 1 2 3 4 5 6 7 Data Sheet BTS50055-1TMC Symbol OUT OUT IN Vbb IS OUT OUT Function O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) I Input, activates the power switch in case of short to ground + Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). S Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6) O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9) Load current (short circuit current, see page 5) Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms, IN, IS = open or grounded Vbb Vbb IL VLoad dump6) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 7.5 mH, 0 Ω, (see diagrams on page 9 ) Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ Tj Tstg Ptot EAS VESD Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 IIN IIS Values Unit 42 V 34 V self-limited A 75 V -40 ...+150 -55 ...+150 170 °C W 1.5 J 4 kV +15 , -250 mA +15 , -250 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) Otherwise add about 0.3 mΩ to the RON if the pin is used instead of the tab. 5) RI = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Page 2 of 17 2010-April-27 Data Sheet BTS50055-1TMC Thermal Characteristics Parameter and Conditions Symbol Thermal resistance chip - case: junction - ambient (free air): SMD version, device on PCB8): Electrical Characteristics RthJC7) RthJA Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max -- -- 0.75 -- 60 -- 33 Unit K/W Values Unit min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7) VIN = 0, IL = 20 A Tj = 25 °C: Tj = 150 °C: VIN = 0, IL = 90 A Vbb = 6V9), VIN = 0, IL = 20 A Tj = 150 °C: Tj = 150 °C: Nominal load curren.


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