Document
Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection • Green product (RoHS compliant) • AEC qualified
Product Summary Operating voltage On-state resistance Noinal current Load current (ISO) Short circuit current limitation Current sense ratio
Vbb(on)
RON IL(nom) IL(ISO) IL(SC) IL : IIS
PG-TO220-7-4
7
Application
• Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads • Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 mΩ 17 A 70 A 130 A 14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage source
Voltage sensor
3 IN
ESD
Logic
Overvoltage protection
Current limit
Gate protection
R bb
Charge pump Level shifter
Rectifier
Limit for unclamped ind. loads
Output Voltage detection
Current Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature sensor
VIN VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27
Pin 1 2 3 4
5 6 7
Data Sheet BTS50055-1TMC
Symbol OUT OUT IN Vbb
IS OUT OUT
Function
O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)
O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)
I Input, activates the power switch in case of short to ground
+ Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection instead of this pin4).
S Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6)
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection, Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9) Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms, IN, IS = open or grounded
Vbb Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 7.5 mH, 0 Ω, (see diagrams on page 9 )
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Tj Tstg Ptot
EAS
VESD
Current through input pin (DC) Current through current sense status pin (DC)
see internal circuit diagrams on page 7
IIN IIS
Values Unit 42 V 34 V
self-limited A
75 V
-40 ...+150 -55 ...+150
170
°C W
1.5 J 4 kV
+15 , -250 mA +15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy 4) Otherwise add about 0.3 mΩ to the RON if the pin is used instead of the tab. 5) RI = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Page 2 of 17
2010-April-27
Data Sheet BTS50055-1TMC
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on PCB8):
Electrical Characteristics
RthJC7) RthJA
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
-- -- 0.75
-- 60
--
33
Unit K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7)
VIN = 0, IL = 20 A
Tj = 25 °C: Tj = 150 °C:
VIN = 0, IL = 90 A Vbb = 6V9), VIN = 0, IL = 20 A
Tj = 150 °C: Tj = 150 °C:
Nominal load curren.