PNP/NPN Epitaxial Planar Silicon Transistors
50V/12A Switching Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
· Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Wide ASO leading to high resistance to breakdown.
( ) : 2SB826
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
* : The 2SB826/2SD1062 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC46
–55 to +150
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO)/8-3832/D251MH/4027KI/3135KI No.723–1/4