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2SD1815

ON Semiconductor

Bipolar Transistor

Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor (–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA htt...


ON Semiconductor

2SD1815

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Description
Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor (–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim High fT Fast switching time Halogen free compliance Specifications ( ): 2SB1215 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings (--)120 (--)100 (--)6 (--)3 (--)6 Unit V V V A A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 4 0.85 0.7 5.5 1.5 7.0 2.3 0.5 2SB1215S-E 2SB1215S-H 2SB1215T-E 2SB1215T-H 2SD1815S-E 2SD1815S-H 2SD1815T-E 1.2 2SD1815T-H 0.8 1.6 7.5 0.6 123 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 4 0.85 123 0.6 2.3 2.3 0.8 5.5 1.5 2.5 7.0 1.2 2.3 0.5 0.5 2SB1215S-TL-E 2SB1215S-TL-...




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