Ordering number:2092B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1136/2SD1669
50V/12A Switching Applications
Appl...
Ordering number:2092B
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1136/2SD1669
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other genral high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (
PNP), 0.4V (
NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2041A
[2SB1136/2SD1669]
( ) : 2SB1136
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A IC=(–)6A, IB=(–)0.6A
* : The 2SB1136/2SD1669 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-220ML
Ratings (–)60 (–)50 (–)6 (–)12 (–)15 2 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
(–)0.4
Unit mA mA
MHz V
Any and all SANYO products described o...