Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Curr...
Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP /
NPN Epitaxial Planar Silicon
Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
Voltage
regulators, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit : mm 2038A
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates
higher-density mounting, thus allows the applied hybrid IC’s further miniaturization.
Specifications
( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C
[2SB1123 / 2SD1623] 4.5 1.6 1.5
1.0 2.5 4.25max
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter
SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta=25°C
Conditions Mounted on a ceramic board (250mm2!0.8mm)
Ratings (--)60 (--)50 (--)6 (--)2 (--)4 0.5 1.3 150
--55 to +150
Unit V V V A A W W °C °C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
DC Current Gain
hFE(1) hFE(2)
VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)1.5A
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 2...
