B1122

Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications · Voltage regulators relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) Ratings (–)60 (–)50 (–)5 (–)1 (–)2 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz Ratings min typ 100* 30 150 (12) 8.5 max (–)100 (–)100 560* Unit nA nA MHz pF pF * ; The 2SB1122/2SD1622 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 Any and all SANYO products described or contained herein do not have specifications that can handle ...