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B1015A Dataheets PDF



Part Number B1015A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SB1015A
Datasheet B1015A DatasheetB1015A Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperatur.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.5 2.0 25 150 -55~150 Unit V V V A A W °C °C Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2003-02-04 2SB1015A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = -0.5 A VCB = -10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ¾ ¾ -100 mA ¾ ¾ -100 mA -60 ¾ ¾ V 60 ¾ 200 20 ¾ ¾ ¾ -0.5 -1.7 V ¾ -0.7 -1.0 V ¾ 9 ¾ MHz ¾ 150 ¾ pF Turn-on time ton 20 ms Input IB1 Output ¾ 0.4 ¾ IB1 IB2 15 9 Switching time Storage time Fall time tstg IB2 VCC = -30 V tf -IB1 = IB2 = 0.2 A, duty cycle <= 1% ¾ 1.7 ¾ ms ¾ 0.5 ¾ Note: hFE (1) classification O: 60~120, Y: 100~200 Marking B1015A hFE classification (O/Y) Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 Collector current IC (A) IC – VCE -4 Common emitter Tc = 25°C -80 -70 -60 -3 -50 -40 -30 -2 -20 IB = -10 mA -1 0 0 0 -1 -2 -3 -4 -5 Collector-emitter voltage VCE (V) 1000 500 Tc = 100°C 300 25 -25 100 50 hFE – IC Common emitter VCE = -5 V 20 -0.02 -0.1 -0.3 -1 Collector current IC (A) -3 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 2SB1015A IC – VBE -3.0 Common emitter VCE = -5 V -2.0 Tc = 100°C 25 -25 -1.0 0 0 -0.4 -0.8 -1.2 -1.6 Base-emitter voltage VBE (V) VCE (sat) – IC -1 Common emitter -0.5 IC/IB = 10 -0.3 Tc = 100°C -0.1 -0.05 -25 25 -0.02 -0.02 -0.1 -0.3 -1 Collector current IC (A) -3 -5 DC current gain hFE Transient thermal resistance Rth (t) (°C/W) 1000 100 10 1 Rth (t) – tw (1) Without heat sink (2) Infinite heat sink (1) Ta = 25°C (2) Tc = 25°C 0.1 10-3 10-2 10-1 1 10 102 Time t (s) Collector current IC (A) Safe Operating Area -10 IC max (pulsed)* -5 IC max (continuous) -3 1 ms* 10 ms* 100 ms* 1 s* DC operation Tc = 25°C -1 -0.5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. -0.2 -1 -3 -10 VCEO max -30 -100 Collector-emitter voltage VCE (V) 3 2003-02-04 2SB1015A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our .


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