BTS3118N

Smart Low Side Power Switch HITFET BTS 3118N Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) I D(Nom) EAS 42 100 2.17 250 V m
A mJ 4 3 2 1 VPS05163 Application  All kinds of resistive, inductive and capacitive loads in switching or linear applications  µC compatible power switch for 12 V DC applications  Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb HITFET In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3118N Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage VDS Drain source voltage for short circuit protection Tj = -40...150°C VDS(SC) Continuous input current -0.2V  VIN  10V VIN < -0.2V or VIN > 10V IIN Operating temperature Tj Storage temperature Tstg Power dissipation Ptot TC = 85 °C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = VA...