OptiMOS™3 P3-Power-Transistor
Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications •...
OptiMOS™3 P3-Power-
Transistor
Features single P-Channel in SO8 Qualified according JEDEC1) for target applications 150°C operating temperature V GS=25 V, specially suited for notebook applications Pb-free plating; RoHS compliant applications: battery management, load switching Halogen-free according to IEC61249-2-21
BSO080P03NS3 G
Product Summary
VDS RDS(on),max
ID
VGS=-10 V VGS=-6 V
-30 V 8.0 mW 11.4 -14.8 A
PG-DSO-8
Type BSO080P03NS3 G
Package PG-DSO-8
Marking 080P3NS
Lead free Yes
Halogen free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1) Pulsed drain current2)
ID I D,pulse
V GS=-10 V, T A=25 °C V GS=-10 V, T A=70 °C V GS=-6 V, T A=25 °C V GS=-6 V, T A=70 °C T A=25 °C
Avalanche energy, single pulse
E AS
I D=-14.8 A, R GS=25 W
Gate source voltage
V GS
Power dissipation1)
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
-14.8
-12 A
-11.8
-9.4
-12.4
-9.8
-9.9 -7.8
-48
149 mJ
±25 2.5 1.6
-55 ... 150 1C (1 kV - 2 kV)
260 55/150/56
V W °C
°C
Rev. 2.21
page 1
2011-11-02
Parameter
Symbol Conditions
BSO080P03NS3 G
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - soldering point
Thermal resistance, junction - ambient
R thJS
R thJA
minimal footprint, t p≤10 s
minimal f...
