BSS127

UNISONIC TECHNOLOGIES CO., LTD BSS127 0.021A, 600V ENHANCEMENT N-CHANNEL MOSFET  DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.  FEATURES * RDS(ON) ≤ 600Ω @ VGS= 4.5V, ID=0.016A RDS(ON) ≤ 500Ω @ VGS=10V, ID=0.016A * Ultra Low Gate Charge (Typical 140nC) * Ultra High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BSS127L-AE2-R BSS127G-AE2-R SOT-23-3 BSS127L-AE3-R BSS127G-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD GSD Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-824.F BSS127 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Drain Current Continuous TA=25°C TA=70°C ID 0.021 0.017 A A Pulsed (TA=25°C) Peak Diode Recovery dv/dt IDM dv/dt 0.09 A 6 kV/µs Power Dissipation (TA=25°C) Junction Temperature PD TJ 0.3 -55 ~ +150 W °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER Junctio...